2003 May 13 3
NXP Semiconductors
Product data sheet
High voltage double diode BAW101S
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC
60134).
Note
1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad=
1
cm2.
ELECTRICAL CHARACTERISTICS
Tj
=
25
°C unless otherwise specified.
Note
1. Pulse test: pulse width
=
300
μs; δ
=
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
?
300
V
series connection
?
600
V
VRRM
repetitive peak reverse voltage
?
300
V
series connection
?
600
V
IF
continuous forward current
single diode loaded; note
1; see
Fig.2
?
250
mA
double diode loaded; note
1; see
Fig.2
?
140
mA
IFRM
repetitive peak forward current
?
625
mA
IFSM
non-repetitive peak forward
current
square wave; Tj
=
25
°C prior to surge;
t
=
1
μs
?
4.5
A
Ptot
total power dissipation
Tamb
=
25
°C; note
1
?
350
mW
Tstg
storage temperature
?65
+150
°C
Tj
junction temperature
?
150
°C
Tamb
operating ambient temperature
?65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VBR(R)
reverse breakdown voltage
IR
=
100
μA
300
?
V
VF
forward voltage
IF
=
100
mA; note
1
?
1.1
V
IR
reverse current
VR
=
250
V
?
150
nA
VR
=
250
V; Tamb
=
150
°C
?
50
μA
trr
reverse recovery time
when switched from IF
=
30
mA to IR
=
30
mA;
?
RL
=
100
?; measured at IR
=
3
mA
50
ns
Cd
diode capacitance
VR
=
0
V; f
=
1
MHz
?
2
pF